bd434 ? bd436 ? BD438 25/09/2012 comset semiconductors 1 | 3 27/08/2012 silicon pnp power transistors. the bd434-bd436-BD438 are pnp transistors m ounted in jedec to-126 plastic package. they are recommended for use in medium power linear and switching applications. npn complements are bd433-bd435-bd437. compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage (i e = 0) bd434 -22 v bd436 -32 BD438 -45 v ceo collector-emitter voltage (i b = 0) bd434 -22 v bd436 -32 BD438 -45 v ebo emitter-base voltage (i c = 0) -5 v i c collector current -4 a i cm collector current peak -7 i b base current -1 a p c total power dissipation t c = 25c 36 w t j junction temperature 150 c t st g storage temperature -65 to +150 c thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction-case 3.5 c/w r thj-a thermal resistance, junction-ambient in free air 100 c/w www.datasheet.net/ datasheet pdf - http://www..co.kr/
bd434 ? bd436 ? BD438 25/09/2012 comset semiconductors 2 | 3 27/08/2012 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cut-off current i e = 0, v cb = -22 v bd434 - - -100 a i e = 0, v cb = -32 v bd436 i e = 0, v cb = -45 v BD438 i ces collector cut-off current v be = 0, v ce = -22 v bd434 - - -100 v be = 0, v ce = -32 v bd436 v be = 0, v ce = -45 v BD438 i ebo emitter cut-offcurrent i c = 0 v eb = -5 v bd434 - - -1 ma bd436 BD438 v ceo(sus) collector-emitter sustaning voltage (*) i b = 0 i c = -100 ma bd434 -22 - - v bd436 -32 - - BD438 -45 - - v ce(sat) collector-emitter saturation voltage (*) i c = -2 a i b = -200 ma bd434 - - -0.5 v bd436 BD438 -0.6 v be base-emitter voltage(*) i c = -2 a v ce = -1 v bd434 - - -1.1 v bd436 BD438 -1.2 h fe dc current gain (*) i c = -10 ma v ce = -5 v bd434 40 - 130 - bd436 BD438 30 - 130 i c = -500 ma v ce = -1 v bd434 85 - 140 bd436 BD438 i c = -2 a v ce = -1 v bd434 50 - - bd436 BD438 40 - - f t transition frequency i c = -250 ma v ce = -1 v bd434 3 - - mhz bd436 BD438 1. measured under pulse conditions : t p <300s, <1.5 www.datasheet.net/ datasheet pdf - http://www..co.kr/
bd434 ? bd436 ? BD438 25/09/2012 comset semiconductors 3 | 3 27/08/2012 mechanical data case to-126 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semic onductors assumes no responsibility for the consequences of use of such information nor for any infr ingement of patents or other rights of th ird parties which may results from its use. data are subject to change without notice. comset semiconductors makes no warranty, representation or guarantee regar ding the suitability of its pr oducts for any particular purpose, nor does comset semiconductors assume any li ability arising out of the application or use of any product an d specifically disclaims any and all liability, including without limitation co nsequential or incidental damages. comset semiconductors? produ cts are not authorized for use as critical compone nts in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions min max a 7.4 7.8 b 10.5 10.8 c 2.4 2.7 d 0.7 0.9 e 2.25 typ. f 0.49 0.75 g 4.4 typ. l 15.7 typ. m 1.27 typ. n 3.75 typ. p 3.0 3.2 s 2.54 typ. pin 1 : emitter pin 2 : collector pin 3 : base www.datasheet.net/ datasheet pdf - http://www..co.kr/
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